BXY43 Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)

BXY43
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse Voltage
V_R
150
V
Forward Current
I_F
400
mA
Power Dissipation ¹⁾
P_tot
500
mW
Operating Temperature Range
T_op
-55 to +150
°C
Storage Temperature Range
T_stg
-65 to +175
°C
Soldering Temperature ²⁾
T_sol
+235
°C
Junction Temperature
T_j
150
°C
Thermal Resistance Junction-Case
BXY43-T
BXY43-T1
BXY43-P1
BXY43-FP
R_th(j-c)
K/W
100
125
90
100
Notes.:
1.) For BXY43-T: At T_CASE = 100 °C. For T_CASE > 100 °C derating is required.
For BXY43-T1: At T_CASE = 87,5 °C. For T_CASE > 87,5 °C derating is required.
For BXY43-P1: At T_CASE = 105 °C. For T_CASE > 105 °C derating is required.
For BXY43-FP: At T_CASE = 100 °C. For T_CASE > 100 °C derating is required.
2.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have
elapsed.
Electrical Characteristics
at T_A=25°C; unless otherwise specified
Parameter
DC Characteristics
Reverse Current 1
V_R1=150V
Reverse Current 2
V_R2=100V
Forward Voltage
I_F=100mA
Symbol
Values
Unit
min. typ.
max.
I_R1
-
-
100 nA
I_R2
-
-
10 nA
V_F
-
0,97
1
V
Semiconductor Group
2 of 6
Draft B, September 99