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| BUZ73AH Datasheet, PDF (2/10 Pages) Infineon Technologies AG – SIPMOS Power Transistor | |||
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BUZ 73A H
Electrical Characteristics, at Tj = 25ËC, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ËC
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 200 V, VGS = 0 V, Tj = 25 ËC
VDS = 200 V, VGS = 0 V, Tj = 125 ËC
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 4.5 A
Symbol
min.
V(BR)DSS
200
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ.
max.
-
-
3
4
0.1
1
10
100
10
100
0.5
0.6
Unit
V
µA
nA
â¦
Rev. 2.4
Page 2
2009-11-10
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