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| BUZ31 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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BUZ 31
Electrical Characteristics, at Tj = 25ËC, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ËC
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 200 V, VGS = 0 V, Tj = 25 ËC
VDS = 200 V, VGS = 0 V, Tj = 125 ËC
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 9 A
Symbol
min.
Values
Unit
typ.
max.
V(BR)DSS
V
200
-
-
VGS(th)
2.1
3
4
IDSS
-
µA
0.1
1
-
10
100
IGSS
-
nA
10
100
RDS(on)
-
â¦
0.16
0.2
Data Sheet
2
05.99
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