BTS244Z Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)

Maximum Ratings
Parameter
Drain source voltage

Drain-gate voltage, R_GS = 20 k
Gate source voltage
Nominal load current (ISO 10483)
 V_GS = 4.5 V, V_DS 0.5 V, T_C = 85 °C
 V_GS = 10 V, V_DS 0.5 V, T_C = 85 °C
Continuous drain current ¹⁾
T_C = 100 °C, V_GS = 4.5V
Pulsed drain current
Avalanche energy, single pulse

I_D = 19 A, R_GS = 25
Power dissipation
T_C = 25 °C
Operating temperature ²⁾
Peak temperature ( single event )
Storage temperature
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
BTS 244 Z
Symbol
V_DS
V
DGR
V_GS
I_D(ISO)
I_D
I_{D puls}
E_AS
P_tot
T_j
T_jpeak
T_stg
Value
Unit
55
V
55
20
A
19
26
35
188
1.65
J
170
W
-40 ...+175
°C
200
-55 ... +150
E
40/150/56
1current _{limited by bond wire}
2Note: _{Thermal trip temperature of temperature sensor is below 175°C}
2
2000-05-17