|
BTS110 Datasheet, PDF (2/10 Pages) Siemens Semiconductor Group – TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) | |||
|
◁ |
TEMPFET® BTS 110
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 1 mA
Gate threshold voltage
VGS = VDS, ID = 1 mA
Zero gate voltage drain current
VGS = 0 V, VDS = 100 V
Tj = 25 °C
Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
Drain-source on-state resistance
VGS = 10 V, ID = 5 A
Dynamic Characteristics
Forward transconductance
VDS ⥠2 à ID à R , DS(on)max ID = 5 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 10 V, ID = 2.9 A,
RGS = 50 â¦
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 10 V, ID = 2.9 A,
RGS = 50 â¦
Symbol
min.
V(BR)DSS
VGS(th)
I DSS
I GSS
RDS(on)
100
2.5
â
â
â
â
â
gfs
2.7
Ciss
â
Coss
â
Crss
â
td(on)
â
tr
â
td(off)
â
tf
â
Values
Unit
typ.
max.
V
â
â
3.0
3.5
µA
1
10
100
300
10
100
nA
2.0
4.0
µA
â¦
0.17
0.2
S
3.8
8.0
pF
450
600
150
240
80
130
20
30
ns
45
70
70
90
55
70
2
19.02.04
|
▷ |