BSZ050N03LS-G Datasheet, PDF (2/9 Pages) Infineon Technologies AG – 3 Power-MOSFET

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=60 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
BSZ050N03LS G
Value
Unit
50
W
2.1
-55 ... 150
°C
55/150/56
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
Device on PCB
R _{thJA 6 cm}² _{cooling area}²⁾
-
-
2.5 K/W
-
60
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
30
-
-V
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=250 µA
1
-
2.2
Zero gate voltage drain current
I _DSS
V _DS=30 V, V _GS=0 V,
T _j=25 °C
-
0.1
1 µA
V _DS=30 V, V _GS=0 V,
T _j=125 °C
-
10
100
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
10
100 nA
Drain-source on-state resistance
R _DS(on) V _GS=4.5 V, I _D=20 A
-
6.2
7.8 mW
V _GS=10 V, I _D=20 A
-
4.2
5
Gate resistance
R_G
0.7
1.4
2.5 W
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=30 A
38
76
-S
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
Rev. 1.3
page 2
2009-11-05