BSO220N Datasheet, PDF (2/8 Pages) Infineon Technologies AG – SIPMOS-R Small-Signal-Transistor

BSO 220N
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
Thermal resistance @ 10 sec., min. footprint
Thermal resistance @ 10 sec.,
6 cm² cooling area ¹⁾
Symbol
Values
Unit
min. typ. max.
R_thJS
-
-
45 K/W
R_th(JA)
-
- 100
R_th(JA)
-
- 62.5
Electrical Characteristics, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V_GS = 0 V, I_D = 0.25 mA
Gate threshold voltage, V_GS = V_DS
I_D = 10 µA
Zero gate voltage drain current
V_DS = 20 V, V_GS = 0 V, T_j = 25 ˚C
V_DS = 20 V, V_GS = 0 V, T_j = 150 ˚C
V_(BR)DSS 20
-
-V
V_GS(th)
1.2
1.6
2
I_DSS
µA
-
0.1
1
-
- 100
Gate-source leakage current
V_GS = 20 V, V_DS = 0 V
Drain-Source on-state resistance
V_GS = 4.5 V, I_D = 2.6 A
V_GS = 10 V, I_D = 3.2 A
I_GSS
R_DS(on)
-
10 100 nA
Ω
- 0.13 0.2
- 0.08 0.13
1 _{Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Data Sheet
2
05.99