BSO211P Datasheet, PDF (2/8 Pages) Infineon Technologies AG – OptiMOS -P Small-Signal-Transistor

Preliminary data
BSO211P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint, t<10s
@ 6 cm² cooling area ¹⁾
Symbol
Values
Unit
min. typ. max.
R_thJS
R_thJA
-
-
50 K/W
-
- 110
-
- 62.5
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V_GS=0, I_D=-250µA
Gate threshold voltage, V_GS = V_DS
I_D =-25µA
Zero gate voltage drain current
V_DS=-20V, V_GS=0, T_j=25°C
V_DS=-20V, V_GS=0, T_j=150°C
Gate-source leakage current
V_GS=-12V, V_DS=0
Drain-source on-state resistance
V_GS=-2.5V, I_D=-3.7A
Drain-source on-state resistance
V_GS=-4.5V, I_D=-4.7A
V_(BR)DSS -20
-
-V
V_GS(th) -0.6 -0.9 -1.2
I_DSS
I_GSS
µA
- -0.1 -1
-
-10 -100
-
-10 -100 nA
R_DS(on)
-
86 110 mΩ
R_DS(on)
-
53 67
1Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air; t ≤10 sec.
Page 2
2002-01-22