BSO130N03MSG Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET

Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Symbol Conditions
BSO130N03MS G
min.
Values
typ.
Unit
max.
R _thJS
-
R _thJA
minimal footprint,
t _p≤10 s
-
minimal footprint,
steady state
-
6 cm² cooling area¹⁾,
-
t _p≤10 s
6 cm² cooling area¹⁾,
-
steady state
-
35 K/W
-
110
-
150
-
50
-
80
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
30
V _GS(th) V _DS=V _GS, I _D=250 µA
1
I _DSS
V _DS=30 V, V _GS=0 V,
T _j=25 °C
-
V _DS=30 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=16 V, V _DS=0 V
-
R _DS(on) V _GS=4.5 V, I _D=9.9 A
-
V _GS=10 V, I _D=11.1 A
-
R_G
0.5
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=11.1 A
14
-
-V
-
2
0.1
10 µA
10
100
10
100 nA
13.3 16.6 mΩ
10.8
13
1.1
1.9 Ω
27
-S
1) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Rev.1.1
page 2
2009-11-19