BSL315P Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS™-P 2 Small-Signal-Transistor

Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Symbol Conditions
BSL315P
min.
Values
typ.
Unit
max.
R _{thJA minimal footprint}²⁾
-
-
250 K/W
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS= 0V, I _D=-250µA
-30
-
-V
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
V _GS(th) V _DS=V_GS, I _D=-11µA
-2.0
I _DSS
V _DS=-30V, V _GS=0 V,
T _j=25 °C
-
V _DS=-30V, V _GS=0V,
T _j=150 °C
-
I _GSS
V _GS=-20V, V _DS=0V
-
R _DS(on)
V _GS=4.5 V,
I _D=-1.1 A
-
V _GS=10 V, I _D=-1.5 A
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=-1.18 A
-
-1.5
-1.0
-
-1 µA
-
-100
-
-100 nA
173
270 mΩ
109
150
2.7
-S
2) _{Performed on 40mm}2 _{FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides}
of the PCB.
Rev 2.2
page 2
2010-03-29