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BSG0810NDI Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Pb-free lead plating; RoHS compliant
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Parameter
Symbol Conditions
BSG0810NDI
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction -
Q1 R thJC
-
case
Q2
-
Thermal resistance, junction -
Q1 R thJA Application specific
ambient2)
Q2
board3)
-
Q1
6 cm2 cooling area4)
-
Q2
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Q1
V (BR)DSS V GS=0 V, I D=1 mA
256)
Q2
Breakdown voltage temperature Q1 dV (BR)DSS I D=10 mA, referenced
coefficient
Q2 /dT j
to 25 °C
-
Gate threshold voltage
Q1
V GS(th) V DS=V GS, I D=250 µA
1.2
Q2
Zero gate voltage drain current Q1 I DSS
V DS=25 V, V GS=0 V,
-
Q2
T j=25 °C
-
Q1
V DS=20 V, V GS=0 V,
-
Q2
T j=125 °C
-
Gate-source leakage current
Q1 I GSS
V GS=16 V, V DS=0 V
-
Q2
Drain-source on-state
resistance
Q1 R DS(on)
-
V GS=4.5 V, I D=20 A
Q2
-
Q1
-
V GS=10 V, I D=20 A
Q2
-
Gate resistance
Q1 R G
-
Q2
-
Transconductance
Q1 g fs
Q2
2) Remark: only one of both transistors active
Rev.2.0.1
|V DS|>2|I D|R DS(on)max,
47
I D=20 A
55
page 2
-
-
-
-
-
15
1.6
-
-
-
0.9
-
3.2
1.0
2.4
0.75
0.7
0.8
94
110
4.3 K/W
1.8
20
50
-V
- mV/K
2V
1 µA
500
100
- mA
100 nA
4.0 mW
1.2
3.0
0.9
1.2 W
1.3
-S
-
2015-08-21
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