BSF030NE2LQ Datasheet, PDF (2/13 Pages) Infineon Technologies AG – n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSF030NE2LQ
1
Description
OptiMOS™25V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 25V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications.
Features
• Optimized for high performance buck converters
• 100% avalanche tested
• Low parasitic inductance
• Qualified according to JEDEC¹⁾ for target applications
• Low profile (<0.7 mm)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Double-sided cooling
• Compatible with DirectFET® package SQ footprint and outline²⁾
• 100% Rg Tested
Applications
• On board power for server
• Power managment for high performance computing
• Synchronous rectification
• High power density point of load converters
Table 1 Key Performance Parameters
Parameter
Value
Unit
V_DS
25
V
R_DS(on),max
3
mΩ
I_D
75
A
Q_OSS
13
nC
Q_g._typ
23
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Type
BSF030NE2LQ
Package
MG-WDSON-2
Marking
03E2
1) J-STD20 and JESD22
2) CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET ® is a registered
trademark of International Rectifier Corporation.
Final Data Sheet
1
2.0, 2011-03-18