BSD816SN Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS™2 Small-Signal-Transistor

Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Symbol Conditions
BSD816SN
min.
Values
typ.
Unit
max.
R _{thJA minimal footprint} ¹⁾
-
-
250 K/W
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS= 0 V, I _D= 250 µA
20
-
-V
Gate threshold voltage
Drain-source leakage current
V _GS(th) V _DS=V_GS, I _D=3.7 µA
0.3
0.55 0.95
I _DSS
V _DS=20 V, V _GS=0 V,
T _j=25 °C
-
-
1 µA
V _DS=20 V, V _GS=0 V,
T _j=150 °C
-
-
100
Gate-source leakage current
Drain-source on-state resistance
I _GSS
R _DS(on)
V _GS=8 V, V _DS=0 V
V _GS=1.8 V,
I _D=0.44 A
-
-
100 nA
-
158
240 mΩ
V _GS=2.5 V, I _D=1.4 A
-
112
160
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=1.1 A
4.8
-S
1) _{Performed on 40mm}2 _{FR4 PCB. The traces are 1mm wide 70µm thick and 20mm long; they are present on both sides}
of the PCB.
Rev 2.2
page 2
2010-03-25