BSC320N20NS3G Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

BSC320N20NS3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R _thJC
R _thJA
minimal footprint
6 cm2 cooling area³⁾
min.
Values
typ.
Unit
max.
-
-
1 K/W
-
-
75
-
-
50
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
200
-
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=90 µA
2
3
Zero gate voltage drain current
I _DSS
V _DS=160 V, V _GS=0 V,
T _j=25 °C
-
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _DS=160 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on) V _GS=10 V, I _D=36 A
-
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=36 A
29
10
100
1
100 nA
27
32 mΩ
2.5
-Ω
58
-S
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-10-22