BSC16DN25NS3G Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R _thJC
Thermal resistance,
junction - ambient
R _thJA
6 cm² cooling area³⁾
BSC16DN25NS3 G
min.
Values
typ.
Unit
max.
-
-
2 K/W
-
-
50
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
250
-
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=32 µA
2
3
Zero gate voltage drain current
I _DSS
V _DS=200 V, V _GS=0 V,
T _j=25 °C
-
0.1
-V
4
1 µA
V _DS=200 V, V _GS=0 V,
T _j=125 °C
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on) V _GS=10 V, I _D=5.5 A
-
Gate resistance
R_G
-
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=5.5 A
7
10
100
1
100 nA
146
165 m#
2.1
-#
14
-S
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2010-09-01