BSC0908NS Datasheet, PDF (2/12 Pages) Infineon Technologies AG – n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSC0908NS
1
Description
OptiMOS™30V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 30V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performancepackages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
• Optimized for high performance Buck converter
• 100% avalanche tested
• Very low on-resistance R_DS(on) @ V_GS=4.5 V
• Ultra low gate (Q_g) and output charge (Q_oss) for given R_DS(on)
• Qualified according to JEDEC¹⁾ for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Applications
• On board power for server
• Power managment for high performance computing
• Synchronous rectification
• High power density point of load converters
Table 1 Key Performance Parameters
Parameter
Value
Unit
V_DS
34
V
R_DS(on),max
8
m#
I_D
49
A
Q_OSS
Q_g._typ
11
nC
6.8
nC
Type
BSC0908NS
Package
PG-TDSON-8
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Marking
0908NS
1) J-STD20 and JESD22
Final Data Sheet
1
3.1, 2010-10-18