BSC072N025S_09 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R _thJC
Thermal resistance,
junction - ambient
R _thJA
bottom
top
minimal footprint
6 cm² cooling area²⁾
BSC072N025S G
min.
Values
typ.
Unit
max.
-
-
2.1 K/W
18
-
-
62
-
-
45
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
25
V _GS(th) V _DS=V _GS, I _D=30 µA
1.2
I _DSS
V _DS=25 V, V _GS=0 V,
T _j=25 °C
-
V _DS=25 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on) V _GS=4.5 V, I _D=30 A
-
V _GS=10 V, I _D=40 A
-
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=40 A
29
-
-V
1.6
2
0.1
1 µA
10
100
10
100 nA
8.7
10.9 mΩ
6.0
7.2
1.2
-Ω
58
-S
1)_{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3}
Rev. 1.4
page 2
2009-10-23