BSC054N04NSG_13 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=50 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
BSC054N04NS G
Value
Unit
57
W
2.5
-55 ... 150
°C
55/150/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC bottom
-
top
-
Device on PCB
R _{thJA 6 cm}² _{cooling area}²⁾
-
Electrical characteristics, at T _j=25 °C, unless otherwise specified
-
2.2 K/W
-
20
-
50
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
40
-
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=27 µA
2
-
Zero gate voltage drain current
I _DSS
V _DS=40 V, V _GS=0 V,
T _j=25 °C
-
0.1
-V
4
1 µA
V _DS=40 V, V _GS=0 V,
T _j=125 °C
-
10
100
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
10
100 nA
Drain-source on-state resistance
R _DS(on) V _GS=10 V, I _D=50 A
-
4.5
5.4 mW
Gate resistance
R_G
-
1.5
-W
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=50 A
34
67
-S
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev. 2.1
page 2
2013-05-17