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BSC052N03LS Datasheet, PDF (2/12 Pages) Infineon Technologies AG – n-Channel Power MOSFET
OptiMOS™ Power-MOSFET
BSC052N03LS
1
Description
OptiMOS™30V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 30V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications.
Features
• Optimized for high performance buck converters
• 100% avalanche tested
• Very low on-resistance RDS(on) @ VGS=4.5 V
• N-channel
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Applications
• On board power for server
• Power managment for high performance computing
• Synchronous rectification
• High power density point of load converters
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
5.2
mΩ
ID
57
A
QOSS
7.7
nC
Qg.typ
12
Type
BSC052N03LS
Package
PG-TDSON-8
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Marking
052N03LS
1) J-STD20 and JESD22
Final Data Sheet
1
2.0, 2011-03-01