BSC0500NSI_15 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

1Description
Features
•Optimizedforhighperformancebuckconverters
•MonolithicintegratedSchottky-likediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC¹⁾fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
1.3
mΩ
ID
100
A
QOSS
27
nC
QG(0V..4.5V)
18
nC
OptiMOS^TM5Power-MOSFET,30V
BSC0500NSI
SuperSO8
8 _{7 65}
56 ₇₈
1
2 ₃₄
4
321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSC0500NSI
Package
PG-TDSON-8
Marking
0500NSI
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
2
Rev.2.0,2015-07-13