BSC039N06NS_12 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=50 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
BSC039N06NS
Value
Unit
69
W
2.5
-55 ... 150
°C
55/150/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
top
-
Device on PCB
R _{thJA 6 cm}² _{cooling area}²⁾
-
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V _(BR)DSS V _GS=0 V, I _D=1 mA
60
V _GS(th) V _DS=V _GS, I _D=36 µA
2.1
I _DSS
V _DS=60 V, V _GS=0 V,
T _j=25 °C
-
V _DS=60 V, V _GS=0 V,
T _j=125 °C
-
I _GSS
V _GS=20 V, V _DS=0 V
-
R _DS(on) V _GS=10 V, I _D=50 A
-
V _GS=6 V, I _D=12.5 A
-
R_G
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=50 A
42
-
1.8 K/W
-
20
-
50
-
-V
2.8
3.3
0.5
1 µA
10
100
10
100 nA
3.3
3.9 mW
4.8
5.9
1.6
2.4 W
85
-S
Rev.2.1
page 2
2012-12-07