BSB280N15NZ3G_11 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
1
Description
OptiMOS™150V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™
150V the best choice for the demanding requirements of voltage regulator
solutions in Solar, Drives, Datacom and Telecom applications. Super fast
switching Control FETs together with low EMI Sync FETs provide solutions that
are easy to design in. OptiMOS™ products are available in high performance
packages to tackle your most challenging applications giving full flexibility in
optimizing space- efficiency and cost.
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R_DS(on)
• Qualified according to JEDEC¹⁾ for target applications
• Excellent gate charge x R_DS(on) product (FOM)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Double sided cooling
• Compatible with DirectFET® package MZ footprint and outline
• Low parasitic inductance
• Low profile (<0.7 mm)
Applications
• Synchronous rectification
• Primary side switches
• Power managment for high performance computing
• High power density point of load converters
Table 1 Key Performance Parameters
Parameter
Value
Unit
V_DS
150
V
R_DS(on),max
28
mΩ
I_D
30
A
Q_OSS
38
nC
Q_g._typ
15
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Type
BSB280N15NZ3 G
Package
MG-WDSON-2
Marking
0215
1) J-STD20 and JESD22
Final Data Sheet
1
2.5, 2011-09-16