BSB012NE2LXI Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

OptiMOS^TMPower-MOSFET,25V
BSB012NE2LXI
1Description
Features
•OptimizedSyncFETforhighperformanceBuckconverter
•IntegratedmonolithicSchottkylikediode
•Lowprofile(<0.7mm)
•100%avalanchetested
•100%RGTested
•Double-sidedcooling
•CompatiblewithDirectFET®packageMXfootprintandoutline¹⁾
•QualifiedaccordingtoJEDEC²⁾fortargetapplications
•Pb-freeleadplating;RoHScompliant
CanPAKM-size
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
25
V
RDS(on),max
1.2
mΩ
ID
170
A
Qoss
39
nC
Qg(0V..10V)
62
nC
Gate
Source
Type/OrderingCode
BSB012NE2LXI
Package
MG-WDSON-2
Marking
05E2
RelatedLinks
-
1) _CanPAKTM _{uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered}
trademark of International Rectifier Corporation.
2) _{J-STD20 and JESD22}
Final Data Sheet
2
Rev.2.1,2015-09-09