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BG3130 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – DUAL N-Channel MOSFET Tetrode
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Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, VG1S = 0 V, VG2S = 0 V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
Gate2-source breakdown voltage
+IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 V
Gate2-source leakage current
VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
BG3130...
Symbol
Values
Unit
min. typ. max.
V(BR)DS
12
-
-V
+V(BR)G1SS 6
-
15
+V(BR)G2SS 6
-
15
+IG1SS
-
-
50 µA
+IG2SS
-
-
50 nA
IDSS
-
-
10 µA
IDSX
-
10
- mA
VG1S(p)
VG2S(p)
-
0.7
-V
-
0.6
-
2
Feb-27-2004
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