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| BFS17S_07 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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BFS17S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 25 V, IE = 0
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
DC current gain-
IC = 2 mA, VCE = 1 V, pulse measured
IC = 25 mA, VCE = 1 V, pulse measured
V(BR)CEO 15
ICBO
-
-
IEBO
-
hFE
40
20
-
-V
µA
- 0.05
-
10
- 100
-
- 150
70
-
Collector-emitter saturation voltage
IC = 10 mA, IB = 1 mA
VCEsat
-
0.1 0.4 V
2007-03-30
2
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