BFR949L3 Datasheet, PDF (2/3 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR949L3
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 20 V, V_BE = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
Emitter-base cutoff current
V_EB = 1 V, I_C = 0
V_(BR)CEO 10
I_CES
-
I_CBO
-
I_EBO
-
-
-
- 100
- 100
-
0.1
DC current gain
I_C = 5 mA, V_CE = 6 V
h_FE
100 140 200
Unit
V
µA
nA
µA
-
2
Aug-09-2001