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BFR380F Datasheet, PDF (2/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFR380F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
IC = 40 mA, VCE = 3 V
V(BR)CEO 6
9
-
ICBO
-
-
100
IEBO
-
-
1
hFE
60 100 200
Unit
V
nA
µA
-
2
Jan-24-2003
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