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| BFR182W_10 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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BFR182W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 4 V, VBE = 0
VCE = 15 V, VBE = 0 V, TA = 85 °C
(verified by random sampling)
V(BR)CEO 12
-
-V
ICES
nA
-
1
30
-
5
70
Collector-base cutoff current
VCB = 4 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 10 mA, VCE = 8 V, pulse measured
ICBO
IEBO
hFE
-
1
30
-
-
50
70 100 140 -
2
2010-04-06
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