BFP640_07 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP640
Maximum Ratings
Parameter
Collector-emitter voltage
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 90°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point²⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Symbol
R_thJS
Value
Unit
V
4
3.7
13
13
1.2
50
mA
3
200
mW
150
°C
-65 ... 150
-65 ... 150
Value
Unit
≤ 300
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 13 V, V_BE = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 0.5 V, I_C = 0
DC current gain
I_C = 30 mA, V_CE = 3 V, pulse measured
V_(BR)CEO 4
4.5
-V
I_CES
-
-
30 µA
I_CBO
-
-
100 nA
I_EBO
-
-
3 µA
h_FE
110 180 270 -
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2007-05-29
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