BFP520_15 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP520
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
450
K/W
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 2 V, V_BE = 0
V_CE = 10 V, V_BE = 0
Collector-base cutoff current
V_CB = 2 V, I_E = 0
Emitter-base cutoff current
V_EB = 0.5 V, I_C = 0
DC current gain
I_C = 20 mA, V_CE = 2 V, pulse measured
V_(BR)CEO ^2.5
3
3.5 V
I_CES
I_CBO
nA
-
1
30
-
- 1000
-
-
30
I_EBO
- 100 3000
h_FE
70 110 170 ^-
1_{For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)}
2
2015-10-12