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| BFP420E6327 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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BFP420
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
⤠260
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 4 V, pulse measured
V(BR)CEO 4.5
5
-V
ICES
-
-
10 µA
ICBO
-
-
100 nA
IEBO
-
-
3 µA
hFE
60 95 130 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2009-12-02
2
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