BFP405F Datasheet, PDF (2/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

SIEGET
25 ^BFP405F
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 5 V, I_E = 0
Emitter-base cutoff current
V_EB = 1.5 V, I_C = 0
DC current gain
I_C = 5 mA, V_CE = 4 V
V_(BR)CEO 4.5
I_CBO
-
I_EBO
-
h_FE
50
5
-V
- 150 nA
-
15 µA
90 150 _-
AC characteristics (verified by random sampling)
Transition frequency
I_C = 10 mA, V_CE = 3 V, f = 2 GHz
Collector-base capacitance
V_CB = 2 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 2 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
f_T
18 25
- GHz
C_cb
- 0.05 0.1 pF
C_ce
-
0.2
-
C_eb
- 0.25 -
F
- 1.25 - dB
I_C = 2 mA, V_CE = 2 V, Z_S = Z_Sopt ,
f = 1.8 GHz
Power gain, maximum stable ¹⁾
I_C = 5 mA, V_CE = 2 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
Insertion power gain
I_C = 5 mA, V_CE = 2 V, f = 1.8 GHz,

Z_S = Z_L = 50
Third order intercept point at output²⁾

I_C = 5 mA, V_CE = 2 V, Z_S=Z_L=50 ,
f = 1.8 GHz
G_ms
|S₂₁|²
IP₃
-
23
-
-
18
-
-
14
- dBm
1dB Compression point at output³⁾
I_C = 5 mA, V_CE = 2 V, f = 1.8 GHz,

Z_S=Z_L=50
P_-1dB
-
0
-
1_{Gms = |S21 / S12|}
2IP3 _{value depends on termination of all intermodulation frequency components. Termination used for this}

measurement is 50 from 0.1MHz to 6GHz.
3DC _{current no input power}
2
Dec-07-2001