BFN38 Datasheet, PDF(2/6 Page) Zetex Semiconductors – SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BFN38 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BFN38

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 300

-V

Collector-base breakdown voltage

IC = 100 ÂµA, IE = 0

Emitter-base breakdown voltage

IE = 100 ÂµA, IC = 0

Collector-base cutoff current

VCB = 250 V, IE = 0

VCB = 250 V, IE = 0 , TA = 150 Â°C

Emitter-base cutoff current

VEB = 5 V, IC = 0

DC current gain1)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

V(BR)CBO 300

V(BR)EBO 6

I CBO

I EBO

ÂµA

0.1

- 100 nA

hFE

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

Base emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

VCEsat

0.5 V

VBEsat

0.9

AC Characteristics

Transition frequency

IC = 20 MHz, VCE = 10 V, f = 20 MHz

Collector-base capacitance

VCB = 30 V, f = 1 MHz

1Pulse test: t < 300Âµs; D < 2%

- MHz

Ccb

1.5

- pF

2007-03-29

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