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BFN24 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
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BFN24, BFN26
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
BFN24
250 -
BFN26
300 -
V
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IE = 0
BFN24
250 -
-
BFN26
300 -
-
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector cutoff current
VCB = 200 V, IE = 0
VCB = 250 V, IE = 0
Collector cutoff current
VCB = 200 V, IE = 0 , TA = 150 °C
VCB = 250 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 3 V, IC = 0
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
BFN24
BFN26
BFN24
BFN26
BFN24
BFN26
V(BR)EBO 5
ICBO
-
-
ICBO
-
-
IEBO
-
hFE
25
40
40
30
-
-
nA
-
100
-
100
µA
-
20
-
20
-
100 nA
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
VCEsat
V
IC = 20 mA, IB = 2 mA
BFN24
-
-
0.4
BFN26
-
-
0.5
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
VBEsat
-
-
0.9
1) Pulse test: t < 300s; D < 2%
2
Nov-30-2001
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