BFN19 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

BFN19
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO 300
-
-V
I_C = 1 mA, I_B = 0
Collector-base breakdown voltage
V_(BR)CBO 300
-
-
I_C = 100 µA, I_E = 0
Emitter-base breakdown voltage
V_(BR)EBO 5
-
-
I_E = 100 µA, I_C = 0
Collector-base cutoff current
I _CBO
µA
V_CB = 250 V, I_E = 0
-
-
0.1
V_CB = 250 V, I_E = 0 , T_A = 150 °C
-
-
20
Emitter-base cutoff current
I _EBO
-
- 100 nA
V_EB = 5 V, I_C = 0
DC current gain¹⁾
h_FE
-
I_C = 1 mA, V_CE = 10 V
25
-
-
I_C = 10 mA, V_CE = 10 V
40
-
-
I_C = 30 mA, V_CE = 10 V
30
-
-
Collector-emitter saturation voltage¹⁾
V_CEsat
-
-
0.5 V
I_C = 20 mA, I_B = 2 mA
Base emitter saturation voltage¹⁾
I_C = 20 mA, I_B = 2 mA
V_BEsat
-
-
0.9
AC Characteristics
Transition frequency
I_C = 20 MHz, V_CE = 10 V, f = 20 MHz
Collector-base capacitance
V_CB = 30 V, f = 1 MHz
f_T
-
100
- MHz
C_cb
-
2.5
- pF
1_{Pulse test: t < 300µs; D < 2%}
2
2007-03-29