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| BCV61_07 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon Double Transistor | |||
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BCV61
Thermal Resistance
Electrical
Junction -
sCohldaerraincgtepriositnitc1s)
at
TA
=
25°C,
unless
otherwise
RthJS
specified
â¤170
K/W
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CEO 30
-
V(BR)CBO 30
-
-V
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6
-
-
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain2)
IC = 0.1 mA, VCE = 5 V
DC current gain2)
IC = 2 mA, VCE = 5 V
ICBO
ICBO
hFE
hFE
BCV61A
BCV61B
BCV61C
-
-
-
-
100 -
15 nA
5 µA
--
110 180 220
200 290 450
420 520 800
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage2)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VCEsat
mV
-
90 250
- 200 600
VBEsat
-
700
-
-
900
-
VBE(ON)
580 660 700
-
- 770
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Puls test: t ⤠300 µs, D = 2%
2
2007-08-09
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