BCR523_07 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – NPN Silicon Digital Transistors

BCR523...
Thermal Resistance
Parameter
Junction - soldering point²⁾
BCR523
BCR523U
Symbol
R_thJS
Value
Unit
K/W
≤ 215
≤ 105
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO 50
-
-V
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
V_(BR)CBO 50
-
-
Collector-base cutoff current
V_CB = 50 V, I_E = 0
Emitter-base cutoff current
V_EB = 5 V, I_C = 0
I _CBO
I _EBO
-
- 100 nA
-
- 0.72 mA
DC current gain-
I_C = 50 mA, V_CE = 5 V
Collector-emitter saturation voltage³⁾
I_C = 50 mA, I_B = 2.5 mA
h_FE
70
-
--
V_CEsat
-
-
0.3 V
Input off voltage
I_C = 100 µA, V_CE = 5 V
V_i(off)
0.3
-
1
Input on voltage
I_C = 10 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
V_i(on)
R₁
R₁/R ₂
0.4
-
1.4
0.7
1
1.3 kΩ
0.09 0.1 0.11 -
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 5 V, f = 100 MHz
f_T
- 100 - MHz
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
3_{Pulse test: t < 300µs; D < 2%}
2
2007-07-24