BCR521 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR521
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
Collector cutoff current
V_CB = 40 V, I_E = 0
Emitter cutoff current
V_EB = 5 V, I_C = 0
DC current gain 1)
I_C = 50 mA, V_CE = 5 V
Collector-emitter saturation voltage1)
I_C = 50 mA, I_B = 2.5 mA
Input off voltage
I_C = 100 µA, V_CE = 5 V
Input on Voltage
I_C = 10 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
V_(BR)CEO 50
V_(BR)CBO 50
I_CBO
-
I_EBO
-
h_FE
20
V_CEsat
-
V_i(off)
0.6
V_i(on)
1
R₁
0.7
R₁/R₂
0.9
-
-V
-
-
-
100 nA
- 3.75 mA
-
--
-
0.3 V
-
1.5
-
1.8
1 1.3 k

1
1.1 -
AC Characteristics
Transition frequency
I_C = 50 mA, V_CE = 5 V, f = 100 MHz
f_T
-
100
- MHz
1) Pulse test: t < 300
s; D < 2%
2
Dec-13-2001