BCR196 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR196...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR196, T_S ≤ 102°C
BCR196F, T_S ≤ 128°C
BCR196L3, T_S ≤ 135°C
BCR196T, T_S ≤ 109°C
BCR196W, T_S ≤ 124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR196
BCR196F
BCR196L3
BCR196T
BCR196W
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Symbol
R_thJS
Value
50
50
10
50
70
200
250
250
250
250
150
150 ... -65
Value
≤ 240
≤ 90
≤ 60
≤ 165
≤ 105
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
2
Aug-29-2003