BCR191 Datasheet, PDF (2/10 Pages) Siemens Semiconductor Group – PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR191.../SEMB1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR191, T_S ≤ 102°C
BCR191F, T_S ≤ 128°C
BCR191L3, T_S ≤ 135°C
BCR191S, T_S ≤ 115°C
BCR191T, T_S ≤ 109°C
BCR191W, T_S ≤ 124°C
SEMB1, T_S ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR191
BCR191F
BCR191L3
BCR191S
BCR191T
BCR191W
SEMB1
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Symbol
R_thJS
Value
50
50
10
30
100
200
250
250
250
250
250
250
150
150 ... -65
Value
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 105
≤ 300
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
2
May-18-2004