BCR185U Datasheet, PDF (2/4 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor Array

BCR185U
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 100 µA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_B = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
V_CB = 40 V, I_E = 0
Emitter cutoff current
V_EB = 6 V, I_C = 0
DC current gain 1)
I_C = 5 mA, V_CE = 5 V
Collector-emitter saturation voltage1)
I_C = 10 mA, I_B = 0.5 mA
Input off voltage
I_C = 100 µA, V_CE = 5 V
Input on Voltage
I_C = 2 mA, V_CE = 0.3 V
Input resistor
Resistor ratio
V_(BR)CEO 50
-
-V
V_(BR)CBO 50
-
-
V_(BR)EBO ^-
-
-V
I_CBO
-
-
100 nA
I_EBO
-
-
167 µA
h_FE
70
-
--
V_CEsat
-
-
0.3 V
V_i(off)
0.5
-
1
V_i(on)
R₁
R₁/R₂
0.5
-
1.4 V
7
10 13 _k

0.19 0.21 0.24 -
AC Characteristics
Transition frequency
I_C = 10 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
-
200
- MHz
C_cb
-
3
- pF
1) Pulse test: t < 300
s; D < 2%
2
Jul-12-2001