BCR169_07 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor

BCR169...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation
BCR169, T_S ≤ 102°C
BCR169F, T_S ≤ 128°C
BCR169S, T_S ≤ 115°C
BCR169W, T_S ≤ 124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR169
BCR169F
BCR169S
BCR169W
Symbol
V_CEO
V_CBO
V_i(fwd)
V_i(rev)
I_C
P_tot
T_j
T_stg
Symbol
R_thJS
Value
50
50
30
5
100
200
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 140
≤ 105
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
2
2007-08-02