BCR116S-E6327 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

BCR116...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR116, T_S ≤ 102°C
BCR116S, T_S ≤ 115°C
BCR116W, T_S ≤ 124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR116
BCR116S
BCR116W
Symbol
V_CEO
V_CBO
V_i(fwd)
V_i(rev)
I_C
P_tot
T_j
T_stg
Symbol
R_thJS
Value
50
50
30
5
100
200
250
250
150
-65 ... 150
Value
≤ 240
≤ 140
≤ 105
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
mW
°C
Unit
K/W
2
2011-08-19