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BCR112 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)
BCR112...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR112, TS ≤102°C
BCR112F, TS ≤128°C
BCR112L3, TS ≤135°C
BCR112T, TS ≤109°C
BCR112U, TS ≤118°C
BCR112W, TS ≤124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR112
BCR112F
BCR112L3
BCR112T
BCR112U
BCR112W
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
15
100
200
250
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 165
≤ 133
≤ 105
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2
Aug-29-2003