BCR108TE6327 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

BCR108...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR108, T_S ≤ 102°C
BCR108F, T_S ≤ 128°C
BCR108L3, T_S ≤ 135°C
BCR108S, T_S ≤ 115°C
BCR108T, T_S ≤ 109°C
BCR108W, T_S ≤ 124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR108
BCR108F
BCR108L3
BCR108S
BCR108T
BCR108W
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Symbol
R_thJS
Value
50
50
5
10
100
200
250
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 105
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
2
Aug-29-2003