BCR103 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor

BCR103...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR103, T_S ≤ 102°C
BCR103F, T_S ≤ 128°C
BCR103L3, T_S ≤ 135°C
BCR103T, T_S ≤ 109°C
BCR103U, T_S ≤ 118°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BCR103
BCR103F
BCR103L3
BCR103T
BCR103U
Symbol
V_CEO
V_CBO
V_EBO
V_i(on)
I_C
P_tot
T_j
T_stg
Symbol
R_thJS
Value
50
50
5
10
100
200
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 165
≤ 133
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
2
Aug-29-2003