BCP69_08 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – PNP Silicon AF Transistor

BCP69...
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
≤ 12
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 30 mA, I_B = 0
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0
Collector-emitter breakdown voltage
I_C = 10 µA, V_BE = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
Collector-base cutoff current
V_CB = 25 V, I_E = 0
V_CB = 25 V, I_E = 0 , T_A = 150 °C
DC current gain²⁾
I_C = 5 mA, V_CE = 10 V
I_C = 500 mA, V_CE = 1 V, BCP69-16
I_C = 500 mA, V_CE = 1 V, BCP69-25
I_C = 1 A, V_CE = 1 V
V_(BR)CEO 20
-
-V
V_(BR)CBO 25
-
-
V_(BR)CES 25
-
-
V_(BR)EBO 5
-
-
I _CBO
h_FE
µA
-
-
0.1
-
- 100
-
50
-
-
100 160 250
160 250 375
60
-
-
Collector-emitter saturation voltage²⁾
I_C = 1 A, I_B = 100 mA
Base-emitter voltage²⁾
I_C = 5 mA, V_CE = 10 V
I_C = 1 A, V_CE = 1 V
V_CEsat
-
V_BE(ON)
-
-
-
0.5 V
0.6
-
-
1
AC Characteristics
Transition frequency
I_C = 100 mA, V_CE = 5 V, f = 100 MHz
f_T
- 100 - MHz
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Pulse test: t < 300µs; D < 2%}
2
2008-10-10