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BCP69 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP medium power transistor
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BCP69
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CEO 20
-
-V
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 25
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)CBO 25
-
-
V(BR)EBO 5
-
-
Collector cutoff current
VCB = 25 V, IE = 0
ICBO
-
-
100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
100 µA
DC current gain 1)
IC = 5 mA, VCE = 10 V
hFE
50
-
--
DC current gain 1)
IC = 500 mA, VCE = 1 V
hFE
BCP69
BCP69-10
85
- 375
85 100 160
BCP69-16
100 160 250
BCP69-25
160 250 375
DC current gain 1)
IC = 1 A, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage 1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
hFE
60
-
-
VCEsat
-
-
0.5 V
VBE(ON)
-
0.6
-
-
-
1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT
-
100
- MHz
1) Pulse test: t ≤=300µs, D = 2%
2
Nov-29-2001
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