BC857BF Datasheet, PDF (2/8 Pages) Infineon Technologies AG – PNP Silicon AF Transistor

BC857BF...BC860BF
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
≤ 90
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
V
I_C = 10 mA, I_B = 0 mA, BC857BF, BC860BF
45
-
-
I_C = 10 mA, I_B = 0 mA, BC858BF, BC859BF
30
-
-
Collector-base breakdown voltage
V_(BR)CBO
I_C = 10 µA, I_E = 0 mA, BC857BF, BC860BF
50
-
-
I_C = 10 µA, I_E = 0 mA, BC858BF, BC859BF
30
-
-
Collector-emitter breakdown voltage
V_(BR)CES
I_C = 10 µA, V_BE = 0 V, BC857BF, BC860BF
50
-
-
I_C = 10 µA, V_BE = 0 V, BC858BF, BC859BF
30
-
-
Emitter-base breakdown voltage
I_E = 1 µA, I_C = 0 µA
Collector-base cutoff current
V_CB = 30 V, I_E = 0 A
V_CB = 30 V, I_E = 0 A, T_A = 150 °C
DC current gain²⁾
I_C = 10 µA, V_CE = 5 V
I_C = 2 mA, V_CE = 5 V
Collector-emitter saturation voltage²⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base emitter saturation voltage²⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base-emitter voltage²⁾
I_C = 2 mA, V_CE = 5 V
I_C = 10 mA, V_CE = 5 V
V_(BR)EBO 5
-
-
I _CBO
-
-
h_FE
-
220
V_CEsat
-
-
V_BEsat
-
-
V_BE(ON)
600
-
µA
- 0.015
-
5
-
250 -
290 475
mV
75 300
250 650
700
-
850
-
650 750
- 820
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Pulse test: t < 300µs; D < 2%}
2
Jun-16-2004