BC846 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN general purpose transistors

BC846...BC850
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Peak emitter current
Total power dissipation, T_S = 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point¹⁾
Symbol
V_CEO
V_CBO
V_CES
V_EBO
I_C
I_CM
I_BM
I_EM
P_tot
T_j
T_stg
BC846 BC847 BC848 Unit
BC850 BC849
65
45
30 V
80
50
30
80
50
30
6
6
5
100
mA
200
mA
200
200
330
mW
150
°C
-65 ... 150
R_thJS

240
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V_(BR)CEO
I_C = 10 mA, I_B = 0
BC846
65
-
BC847/850
45
-
V
-
-
BC848/849
30
-
-
Collector-base breakdown voltage
V_(BR)CBO
I_C = 10 µA, I_E = 0
BC846
80
-
-
BC847/850
50
-
-
BC848/849
30
-
-
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
2
Nov-20-2002